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Dr. Lin Lanying (1918-2003)
Lin Lanying ( Han nationality), was a native of Putian, Fujian province; she died of illness at 85 on March 4, 2003 in Beijing. She graduated from Fujian Union University in1940, and received a doctorate degree from the University of Pennsylvania in 1955. Lin was the first Chinese to receive a Ph.D. from Penn, and also one of the the first female Ph.D. graduates in Penn history.

She returned to China in 1957 as a researcher at the Institute of theChinese Academy of Sciences. In 1980, Dr. Lin was elected deputy director of the China Association for Science and Technology. She was also the vice chairman of the National People's Congress (IV – VI).

Lin served as a researcher at the
Semiconductor Research Institute of the Chinese Academy of Sciences. One of the pioneers of semiconductor science in China, she was devoted to the research of semiconductor material science throughout her career.

She was responsible for successfully developing the first monocrystals in the country, such as silicon, indium antimonide, gallium arsenide and gallium phosphide and laying the foundation for the development of micro-electronics and optoelectronics in China. She succeeded in having a single crystal of gallium arsenide manufactured in one of China’s space satellites in 1987, thus acquiring the world’s first such material developed in space. She was also responsible for R&D of high purity gaseous phase and liquid phase epitaxy materials that reached the advanced level according to international standards.

In recent years, Lin also initiated a new field of micro-gravity semiconductor material science. She has won world-renowned achievements in the research of space growth and the property of gallium arsenide crystal.

Lin was elected an academician of the Chinese Academy of Sciences in 1980.
Lin Lanying before going abroad (3rd from right)
Dr. Lin in university (2nd right)
Doctorate Thesis Approved by U. Penn
Attending the National People’s Congress in 1987 (middle)
June 2009